Patent · US Active

Gas sensitive field-effect-transistor

US7772617B2 · kind B2 · utility

6Cited by

14References

5Claims

0Family size

Assignee

Micronas GmbH · DE

Inventors

Maximilian Fleischer · Ehrenkirchen, DE
Hans Meixner · Haar, DE
Uwe Lampe · Buxtehude, DE
Roland Pohle · Füssen, DE
Ralf Schneider · Birkenfeld, DE
Elfriede Simon · Munich, DE

Key dates

Filing date	Mar 30, 2006
Grant date	Aug 10, 2010
Priority date	—
Expiry date	Oct 13, 2027

Classification

Technology area (CPC G)Physics
CPC primaryG01N27/4143
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

A gas sensitive field effect transistor comprises a semiconductor substrate that includes a capacitance well, and source and drain regions of a field effect transistor. A gate of the field effect transistor is separated from the semiconductor substrate by an insulator, and a gas sensitive layer separated from the gate by an air gap. The field effect transistor provides an output signal indicative of the presence of a target gas within the air gap to an amplifier, which provides an amplified output signal that is electrically coupled to the capacitance well.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.