Method of manufacturing a semiconductor device and such a semiconductor device
US7772646B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 10, 2005 |
| Grant date | Aug 10, 2010 |
| Priority date | — |
| Expiry date | Jan 18, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/981
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is a method of manufacturing a semiconductor device with a semiconductor body comprising a semiconductor substrate and a semiconductor region which are separated from each other with an electrically insulating layer which includes a first and a second sub-layer which, viewed in projection, are adjacent to one another, wherein the first sub-layer has a smaller thickness than the second sub-layer, and wherein, in a first sub-region of the semiconductor region lying above the first sub-layer, at least one digital semiconductor element is formed and, in a second sub-region of the semiconductor region lying above the second sub-layer, at least one analog semiconductor element is formed.According to an example embodiment, the second sub-layer is formed in that the lower border thereof is recessed in the semiconductor body in relation to the lower border of the first sub-layer Fully depleted SOI devices are thus formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.