Magnetic device having perpendicular magnetization and interaction compensating interlayer
US7772659B2 · kind B2 · utility
27Cited by
5References
12Claims
0Family size
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Key dates
| Filing date | Oct 22, 2007 |
| Grant date | Aug 10, 2010 |
| Priority date | — |
| Expiry date | Jul 4, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/5607
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The magnetic device comprises a least two layers made of a magnetic material that are separated by at least one interlayer made of a non-magnetic material. The layers made of a magnetic material each have magnetization oriented substantially perpendicular to the plane of the layers. The layer of non-magnetic material induces an antiferromagnetic coupling field between the layers made of a magnetic material, the direction and amplitude of this field attenuating the effects of the ferromagnetic coupling field of magnetostatic origin that occurs between the magnetic layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.