CMOS image sensor and method for manufacturing the same
US7772666B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 26, 2006 |
| Grant date | Aug 10, 2010 |
| Priority date | — |
| Expiry date | Aug 30, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8063
Abstract
A CMOS image sensor and a method for manufacturing the same are provided. The CMOS image sensor may be capable of improved thickness uniformity form microlenses formed at a reduced distance from the photodiodes. The CMOS image sensor can include: a semiconductor substrate on which a pixel array is formed, the pixel array including photodiodes formed on the semiconductor substrate to different depths for sensing red, green, and blue signals, respectively; an interlayer dielectric formed on the semiconductor substrate and having a trench at an upper portion of the pixel array; an insulating layer sidewall formed at a side of the trench; and a plurality of microlenses formed on the interlayer dielectric in the trench at predetermined intervals.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.