Deep trench isolation and method for forming same
US7772673B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 16, 2007 |
| Grant date | Aug 10, 2010 |
| Priority date | — |
| Expiry date | Jun 27, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D10/40
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to one exemplary embodiment, a semiconductor die including at least one deep trench isolation region for isolating an electronic device (for example, a bipolar device) includes a trench situated in a substrate of the semiconductor die, where the trench has sides surrounding the electronic device, and where the trench has at least one trench chamfered corner formed between and connecting the sides of the trench. The at least one trench chamferred corner is formed between a chamfered corner of an outside wall of said trench and a corner of an inside wall of the trench. A trench corner width at the at least one trench chamfered corner is less than a trench side width along the sides of the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.