Patent · US Active

Probe for testing semiconductor devices with features that increase stress tolerance

US7772859B2 · kind B2 · utility

0Cited by

3References

29Claims

0Family size

Assignee

TOUCHDOWN TECHNOLOGIES, INC. · US

Inventors

Melvin Khoo · San Gabriel, US
Nim Tea · Los Angeles, US
Ting Hu · Baldwin Park, US
Zhiyong An · Los Angeles, US

Key dates

Filing date	Mar 4, 2008
Grant date	Aug 10, 2010
Priority date	—
Expiry date	Apr 26, 2028

Classification

Technology area (CPC G)Physics
CPC primaryG01R1/06727
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

A novel probe design is presented that increases a probe tolerance to stress fractures. The probe includes a base, a torsion element connected to the base, and a second element connected to the torsion element through a union angle. The union angle includes an interface between the torsion element and the second element, and the edge of the interface is shaped to diffuse stress. What is further-disclosed are three features that increase stress tolerance. These features include a various union angle interface edge shapes, pivot cutouts and buffers.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.