Method for improving semiconductor surfaces
US7776624B2 · kind B2 · utility
0Cited by
3References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 8, 2008 |
| Grant date | Aug 17, 2010 |
| Priority date | — |
| Expiry date | Sep 24, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/977
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor fabrication method. The method includes providing a semiconductor substrate, wherein the semiconductor substrate includes a semiconductor material. Next, a top portion of the semiconductor substrate is removed. Next, a first semiconductor layer is epitaxially grown on the semiconductor substrate, wherein a first atomic percent of a first semiconductor material in the first semiconductor layer is equal to a substrate atomic percent of the substrate semiconductor material in the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.