Etching solution, method of surface modification of semiconductor substrate and method of forming shallow trench isolation
US7776713B2 · kind B2 · utility
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4References
16Claims
0Family size
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Key dates
| Filing date | May 30, 2007 |
| Grant date | Aug 17, 2010 |
| Priority date | — |
| Expiry date | Jul 3, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76232
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An etching solution, a method of surface modification of a semiconductor substrate and a method of forming shallow trench isolation are provided. The etching solution is used for surface modifying the semiconductor substrate. The etching solution includes an oxidant and an oxide remover. The semiconductor substrate is oxidized to a semiconductor oxide by the oxidant, and the oxide remover subtracts the semiconductor oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.