Method of manufacturing an epitaxial semiconductor substrate and method of manufacturing a semiconductor device
US7776723B2 · kind B2 · utility
1Cited by
6References
29Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 29, 2005 |
| Grant date | Aug 17, 2010 |
| Priority date | — |
| Expiry date | Jul 11, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In an example embodiment of the method of manufacturing an epitaxial semiconductor substrate, a gettering layer is grown over a semiconductor substrate. An epitaxial layer may then be formed over the gettering layer, and a semiconductor device may be formed on the epitaxial layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.