Anti-halo compensation
US7776725B2 · kind B2 · utility
0Cited by
28References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 12, 2005 |
| Grant date | Aug 17, 2010 |
| Priority date | — |
| Expiry date | Mar 18, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28247
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An apparatus and method for controlling the net doping in the active region of a semiconductor device in accordance with a gate length. The method includes doping a short channel device and a long channel device with a first dopant, and doping the short channel device and the long channel device with a second dopant at a same implantation energy, dose, and angle for both the short channel device and the long channel device. The second dopant neutralizes the first dopant in portion to a gate length of the short channel device and the second channel device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.