Cheruvu Murthy
4Patents
3h-index
8Co-inventors
39Inventor score
Filing activity: Dec 9, 1997 → Sep 12, 2005
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6686630B2 | Damascene double-gate MOSFET structure and its fabrication method | Electricity | 26 | Expired |
| US6218236A | Method of forming a buried bitline in a vertical DRAM device | Electricity | 19 | Expired |
| US6057216A | Low temperature diffusion process for dopant concentration enhancement | Emerging Cross-Sectional Technologies | 11 | Expired |
| US7776725B2 | Anti-halo compensation | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.