Method of fabricating semiconductor devices employing at least one modulation doped quantum well structure and one or more etch stop layers for accurate contact formation
US7776753B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 23, 2006 |
| Grant date | Aug 17, 2010 |
| Priority date | — |
| Expiry date | Jun 18, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/85
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a semiconductor device includes the steps of forming (or providing) a series of layers formed on a substrate, the layers including a first plurality of layers including an n-type ohmic contact layer, a p-type modulation doped quantum well structure, an n-type modulation doped quantum well structure, and a fourth plurality of layers including a p-type ohmic contact layer. Etch stop layers are used during etching operations when forming contacts to the n-type ohmic contact layer and contacts to the n-type modulation doped quantum well. Preferably, each such etch stop layer is made sufficiently thin to permit current tunneling therethrough during operation of optoelectronic/electronic devices realized from this structure (including heterojunction thyristor devices, n-channel HFET devices, p-channel HFET devices, p-type quantum-well-base bipolar transistor devices, and n-type quantum-well-base bipolar transistor devices). The etch stop layer(s) preferably comprise AlAs that functions as an etch stop during etching by a chlorine-based gas mixture that includes fluorine. The series of layers preferably comprise group III-V materials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.