Charge particle beam system, sample processing method, and semiconductor inspection system
US7777183B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 6, 2007 |
| Grant date | Aug 17, 2010 |
| Priority date | — |
| Expiry date | Apr 18, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31745
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A charged particle beam system, a sample processing method, and a semiconductor inspection system enable an accurate detection of a particle in a film without causing LMIS contamination and allow observation with an electron microscope quickly. A particle 65 causing a defect in a film 66 that has been detected with a separate optical inspection system is detected with an optical microscope 43 based on position information acquired by the separate optical inspection system. A sample 31 is processed with a nonmetal ion beam 22 so as to allow observation of the particle 65 with an electron microscope image or an ion microscope image, or ultimate analysis of the particle 65 with an EDX.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.