Non-volatile memory device and semiconductor package including the same
US7777272B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 30, 2008 |
| Grant date | Aug 17, 2010 |
| Priority date | — |
| Expiry date | Apr 30, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/15311
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A non-volatile memory device which can be highly-integrated without a decrease in reliability, and a method of fabricating the same, are provided. In the non-volatile memory device, a first doped layer of a first conductivity type is disposed on a substrate. A semiconductor pillar of a second conductivity type opposite to the first conductivity type extends upward from the first doped layer. A first control gate electrode substantially surrounds a first sidewall of the semiconductor pillar. A second control gate electrode substantially surrounds a second sidewall of the semiconductor pillar and is separated from the first control gate electrode. A second doped layer of the first conductivity type is disposed on the semiconductor pillar.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.