Structure and method for fabricating flip chip devices
US7777333B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 24, 2006 |
| Grant date | Aug 17, 2010 |
| Priority date | — |
| Expiry date | Mar 29, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/351
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A solder bump structure and an under bump metallurgical structure. An upper surface of a semiconductor substrate comprises a first conductive pad (200) disposed thereon. A passivation layer (202) overlies the upper surface. A second conductive pad (212) is disposed in an opening (204) in the passivation layer and in contact with the first conductive pad. The under bump metallurgical structure (300) encapsulates the second conductive pad, covering an upper surface and sidewalls surfaces of the second conductive pad, protecting both the first and the second conductive pads from environmental and processing effects. According to the present invention, the conventional second passivation layer is not required. Methods for forming the various structures are also presented.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.