Non-volatile resistance switching memories and methods of making same
US7778063B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 8, 2007 |
| Grant date | Aug 17, 2010 |
| Priority date | — |
| Expiry date | Dec 19, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An integrated circuit memory cell including: a semiconductor having a first active area, a second active area, and a channel between the active areas; and a layer of a variable resistance material (VRM) directly above the channel. In one embodiment, there is a first conductive layer between the VRM and the channel and a second conductive layer directly above the VRM layer. The VRM preferably is a correlated electron material (CEM). The memory cell comprises a FET, such as a JFET or a MESFET. In another embodiment, there is a layer of an insulating material between the VRM and the channel. In this case, the memory cell may include a MOSFET structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.