Integrated circuit comprising a capacitor with metal electrodes and process for fabricating such a capacitor
US7781296B2 · kind B2 · utility
0Cited by
5References
14Claims
0Family size
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Key dates
| Filing date | Jun 7, 2005 |
| Grant date | Aug 24, 2010 |
| Priority date | — |
| Expiry date | Jun 15, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
Abstract
An integrated circuit (IC) includes at least one capacitor with metal electrodes. At least one of the electrodes (10 or 30) is formed from at least surface-silicided hemispherical grain silicon or silicon alloy. A fabrication process for obtaining such a capacitor with silicided metal electrodes is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.