Methods of fabricating semiconductor devices having isolation regions formed from annealed oxygen ion implanted regions
US7781302B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 7, 2007 |
| Grant date | Aug 24, 2010 |
| Priority date | — |
| Expiry date | Jun 23, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76243
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of fabricating a semiconductor device include forming a mask pattern on a semiconductor substrate and which exposes defined regions of the semiconductor substrate. Oxygen ions are implanted into the defined regions of the semiconductor substrate using the mask pattern as an ion implantation mask. The oxygen ion implanted regions of the semiconductor substrate are annealed at one or more temperatures in a range that is sufficiently high to form silicon oxide substantially throughout the oxygen ion implanted regions by reacting the implanted oxygen ions with silicon in the oxygen ion implanted regions, and that is sufficiently low to substantially prevent oxidation of the semiconductor substrate adjacent to the oxygen ion implanted regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.