Dae-Lok Bae
22Patents
7h-index
40Co-inventors
65Inventor score
Filing activity: Oct 30, 1998 → Oct 28, 2013
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8343851B2 | Wafer temporary bonding method using silicon direct bonding | Electricity | 231 | Active |
| US8354308B2 | Conductive layer buried-type substrate, method of forming the conductive layer buried-type substrate, and method of fabricating semiconductor device using the conductive layer buried-type substrate | Electricity | 224 | Active |
| US8390120B2 | Semiconductor device and method of fabricating the same | Electricity | 26 | Active |
| US6150249A | Methods of forming niobium-near noble metal contact structures for integrated circuits | Electricity | 19 | Expired |
| US8791405B2 | Optical waveguide and coupler apparatus and method of manufacturing the same | Physics | 17 | Active |
| US8570409B2 | Image sensors and methods of manufacturing image sensors | Electricity | 11 | Active |
| US8129833B2 | Stacked integrated circuit packages that include monolithic conductive vias | Electricity | 9 | Active |
| US6437445B1 | Niobium-near noble metal contact structures for integrated circuits | Electricity | 5 | Expired |
| US7605022B2 | Methods of manufacturing a three-dimensional semiconductor device and semiconductor devices fabricated thereby | Electricity | 4 | Active |
| US8319329B2 | Stacked integrated circuit package having recessed sidewalls | Electricity | 3 | Active |
| US9103974B2 | Semiconductor devices having optical transceiver | Physics | 3 | Active |
| US7781302B2 | Methods of fabricating semiconductor devices having isolation regions formed from annealed oxygen ion implanted regions | Electricity | 3 | Active |
| US8422845B2 | Optical input/output device for photo-electric integrated circuit device and method of fabricating same | Physics | 2 | Active |
| US8873901B2 | Buried-type optical input/output devices and methods of manufacturing the same | Physics | 2 | Active |
| US9530726B2 | Semiconductor device and method of fabricating the same | Electricity | 2 | Active |
| US9831164B2 | Semiconductor device and method of fabricating the same | Electricity | 1 | Active |
| US8867882B2 | Optical input/output device for photo-electric integrated circuit device and method of fabricating same | Physics | 0 | Active |
| US8324055B2 | Methods of manufacturing buried wiring type substrate and semiconductor device incorporating buried wiring type substrate | Electricity | 0 | Active |
| US8958002B2 | Image sensors | Electricity | 0 | Active |
| US8735265B2 | Methods of selectively forming silicon-on-insulator structures using selective expitaxial growth process | Electricity | 0 | Active |
| US7932163B2 | Methods of forming stacked semiconductor devices with single-crystal semiconductor regions | Electricity | 0 | Active |
| US8546162B2 | Method for forming light guide layer in semiconductor substrate | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.