Finfet field effect transistor insulated from the substrate

US7781315B2 · kind B2 · utility

Assignees

• STMicroelectronics (Crolles 2) SAS · FR
• INTERUNIVERSITAIR MICRO-ELECTRONICA CENTRUM VZW · BE

Inventor

• Damien Lenoble · Wellin, BE

Key dates

• Filing date: Jun 25, 2008
• Grant date: Aug 24, 2010
• Expiry date: Aug 2, 2028

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S257/902

Abstract

A finFET field effect transistor is produced by the formation of an electrical junction between the thin fin portion of semiconductor material which forms the channel of the transistor and the circuit substrate. Doping particles are implanted in the substrate through a mask which is then subsequently used to form the thin fin portion of the channel. The channel of the finFET transistor is thus electrically insulated from the circuit substrate in the same manner as in MOS integrated circuits realized from bulk silicon substrates.