Semiconductor light emitting element

US7781791B2 · kind B2 · utility

Assignee

• Rohm Co., Ltd. · JP

Inventors

• Mitsuhiko Sakai · Kyoto, JP
• Tadahiro Okazaki · Kyoto, JP
• Ken Nakahara · Kyoto, JP

Key dates

• Filing date: Feb 22, 2007
• Grant date: Aug 24, 2010
• Expiry date: Feb 22, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/825

Abstract

In a semiconductor light emitting element, a p-type layer (220), an active layer (230) and an n-type layer (240) are laminated on a substrate in this order. The n-type layer (240) is formed with a rectangular n-side electrode (241) whose width in one direction is equal to that of the n-type layer (240). The thickness t of the n-type layer (240) satisfies Formula 1 below. The semiconductor light emitting element includes a side surface (270) extending in the lamination direction and formed with a plurality of projections (271). Supposing that the wavelength of the light from the active-layer (230) is λ and the index of refraction of the n-type layer (240) or the p-type layer (220) is n, the average WA of widths at bottoms of the projections is set to satisfy WA≧λ/n.