Optical erase memory structure
US7781806B2 · kind B2 · utility
12Cited by
4References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 18, 2008 |
| Grant date | Aug 24, 2010 |
| Priority date | — |
| Expiry date | Dec 6, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/18
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for providing an optical erase memory structure including: forming a metal-insulator-metal memory cell; positioning a light emitting diode adjacent to the metal-insulator-metal memory cell; and emitting a light emission from the light emitting diode for erasing the metal-insulator-metal memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.