Integrating high-voltage CMOS devices with low-voltage CMOS

US7781843B1 · kind B1 · utility

Assignee

• HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. · US

Inventors

• James Weaver · Corvallis, US
• S. Jonathan Wang · Albany, US
• John Chen · Zhuolan Township, TW
• Sadiq Bengali · Corvallis, US
• Edward Enciso · Corvallis, US
• Tom Cooney · Corvallis, US

Key dates

• Filing date: Jan 11, 2007
• Grant date: Aug 24, 2010
• Expiry date: Oct 31, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/856

Abstract

High-voltage CMOS devices and low-voltage CMOS devices are integrated on a common substrate by forming a sacrificial film over at least active device areas, lithographically defining device active regions of the high-voltage CMOS devices, implanting dopants selectively through the sacrificial film into the lithographically defined device active regions of the high-voltage CMOS devices, diffusing the implanted dopants, removing the sacrificial film, and subsequently forming low-voltage CMOS devices.