S. Jonathan Wang
7Patents
4h-index
18Co-inventors
46Inventor score
Filing activity: Mar 26, 2001 → Jan 11, 2007
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6534841B1 | Continuous antifuse material in memory structure | Electricity | 71 | Expired |
| US6879525B2 | Feedback write method for programmable memory | Physics | 27 | Expired |
| US6818494B1 | LDMOS and CMOS integrated circuit and method of making | Electricity | 16 | Expired |
| US6902258B2 | LDMOS and CMOS integrated circuit and method of making | Electricity | 10 | Expired |
| US7781843B1 | Integrating high-voltage CMOS devices with low-voltage CMOS | Electricity | 4 | Active |
| US7543917B2 | Integrated circuit and method for manufacturing | Electricity | 1 | Active |
| US7150516B2 | Integrated circuit and method for manufacturing | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.