Schottky diode structures having deep wells for improving breakdown voltages

US7781859B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Puo-Yu Chiang · Sanxing, TW
• Tsai Chun Lin · Baoshan, TW
• Chih-Wen Yao · Hsinchu, TW
• David Ho · Taichung, TW

Key dates

• Filing date: Mar 24, 2008
• Grant date: Aug 24, 2010
• Expiry date: Mar 24, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/115

Abstract

An integrated circuit structure includes a semiconductor substrate; a well region of a first conductivity type over the semiconductor substrate; a metal-containing layer on the well region, wherein the metal-containing layer and the well region form a Schottky barrier; an isolation region encircling the metal-containing layer; and a deep-well region of a second conductivity type opposite the first conductivity type under the metal-containing layer. The deep-well region has at least a portion vertically overlapping a portion of the metal-containing layer. The deep-well region is vertically spaced apart from the isolation region and the metal-containing layer by the well region.