David Ho
7Patents
3h-index
18Co-inventors
50Inventor score
Filing activity: Dec 4, 2001 → Jun 8, 2017
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6620683B1 | Twin-bit memory cell having shared word lines and shared bit-line contacts for electrically erasable and programmable read-only memory (EEPROM) and method of manufacturing the same | Electricity | 29 | Expired |
| US7057794B2 | Micromirror for MEMS device | Physics | 5 | Expired |
| US6998304B2 | Method for integrated manufacturing of split gate flash memory with high voltage MOSFETS | Electricity | 3 | Expired |
| US7781859B2 | Schottky diode structures having deep wells for improving breakdown voltages | Electricity | 1 | Active |
| US10755993B2 | Electrical connection structure, semiconductor package and method of forming the same | Electricity | 0 | Active |
| US7153768B2 | Backside coating for MEMS wafer | Performing Operations; Transporting | 0 | Expired |
| US11569146B2 | Semiconductor package and method of forming the same | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.