Patent · US Active

Hall effect device and method

US7782050B2 · kind B2 · utility

24Cited by

1References

28Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Udo Ausserlechner · Villach, AT
Mario Motz · Wernberg, AT

Key dates

Filing date	Apr 11, 2008
Grant date	Aug 24, 2010
Priority date	—
Expiry date	Jul 17, 2028

Classification

Technology area (CPC G)Physics
CPC primaryG01R33/075
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

A semiconductor device including a Hall effect sensor and related method. The Hall effect device includes a substrate having a first conductivity type and an epitaxial layer having a second conductivity type defining a Hall effect portion. A conductive buried layer having the second conductivity type is situated between the epitaxial layer and the substrate. First and second output terminals and first and second voltage terminals are provided, with the second voltage terminal being coupled to the conductive buried layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.