Stacked power clamp having a BigFET gate pull-up circuit

US7782580B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Robert J. Gauthier, Jr. · South Burlington, US
• Junjun Li · Williston, US

Key dates

• Filing date: Oct 2, 2007
• Grant date: Aug 24, 2010
• Expiry date: Sep 24, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D89/819

Abstract

An electronic discharge (ESD) protection circuit for protecting an integrated circuit chip from an ESD event. The ESD protection circuit includes a stack of BigFETs, a BigFET gate driver for driving the gates of the BigFETs and a triggering the BigFET gate driver to drive the gates of the BigFETs in response to an ESD event. The BigFET gate driver includes gate pull-up circuitry for pulling up the gate of a lower one of the BigFETs. The gate pull-up circuitry is configured so as to obviate the need for a diffusion contact between the stacked BigFETs, resulting in a significant savings in terms of the chip area needed to implement the ESD protection circuit.