Junjun Li
141Patents
11h-index
121Co-inventors
79Inventor score
Filing activity: Aug 20, 2004 → Feb 10, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7786535B2 | Design structures for high-voltage integrated circuits | Electricity | 244 | Active |
| US10423985B1 | Method and system for identifying users across mobile and desktop devices | Electricity | 135 | Active |
| US9361322B1 | Unidirectional lookalike campaigns in a messaging platform | Physics | 80 | Active |
| US9041127B2 | FinFET device technology with LDMOS structures for high voltage operations | Electricity | 17 | Active |
| US7782580B2 | Stacked power clamp having a BigFET gate pull-up circuit | Electricity | 17 | Active |
| US9318479B2 | Electrostatic discharge (ESD) silicon controlled rectifier (SCR) with lateral gated section | Electricity | 16 | Active |
| US8445355B2 | Metal-insulator-metal capacitors with high capacitance density | Electricity | 15 | Active |
| US7085113B2 | ESD protection power clamp for suppressing ESD events occurring on power supply terminals | Electricity | 14 | Expired |
| US7714356B2 | Design structure for uniform triggering of multifinger semiconductor devices with tunable trigger voltage | Electricity | 13 | Active |
| US7274546B2 | Apparatus and method for improved triggering and leakage current control of ESD clamping devices | Electricity | 12 | Expired |
| US8760827B2 | Robust ESD protection circuit, method and design structure for tolerant and failsafe designs | Electricity | 11 | Active |
| US11191155B1 | Tamper-respondent assembly with structural material within sealed inner compartment | Electricity | 11 | Active |
| US9461149B2 | Nanowire structure with selected stack removed for reduced gate resistance and method of fabricating same | Electricity | 11 | Active |
| US8010927B2 | Structure for a stacked power clamp having a BigFET gate pull-up circuit | Electricity | 11 | Active |
| US8039868B2 | Structure and method for an electrostatic discharge (ESD) silicon controlled rectifier (SCR) structure | Electricity | 10 | Active |
| US8841174B1 | Silicon controlled rectifier with integral deep trench capacitor | Electricity | 9 | Active |
| US8637388B2 | Semiconductor device heat dissipation structure | Electricity | 9 | Active |
| US9349838B2 | Semiconductor structure with deep trench thermal conduction | Electricity | 8 | Active |
| US8101505B2 | Programmable electrical fuse | Electricity | 8 | Active |
| US8692291B2 | Passive devices for FinFET integrated circuit technologies | Electricity | 8 | Active |
| US7943438B2 | Structure and method for a silicon controlled rectifier (SCR) structure for SOI technology | Electricity | 8 | Active |
| US7826185B2 | Structure and circuit technique for uniform triggering of multifinger semiconductor devices with tunable trigger voltage | Electricity | 7 | Active |
| US9653448B2 | Electrostatic discharge (ESD) diode in FinFET technology | Electricity | 7 | Active |
| US9064786B2 | Dual three-dimensional (3D) resistor and methods of forming | Electricity | 7 | Active |
| US7397641B2 | Apparatus and method for improved triggering and oscillation suppression of ESD clamping devices | Electricity | 6 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.