Method for fabricating micromachined structures
US7785481B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 21, 2007 |
| Grant date | Aug 31, 2010 |
| Priority date | — |
| Expiry date | Mar 26, 2029 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2203/0742
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method for fabricating micromachined structures is provided. At least one cavity is formed on a substrate and then a dielectric material different from the material of the substrate is filled in the at least one cavity. Next, a circuitry layer including a first etch-resistant layer and a dielectric layer is formed above the at least one cavity filled with the dielectric material. A portion of the circuitry layer exposed by the first etch-resistant layer is then etched. Finally, the dielectric material in the at least one cavity is etched out.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.