Patent · US Active

Method for fabricating micromachined structures

US7785481B2 · kind B2 · utility

27Cited by
1References
12Claims
0Family size

Assignee

Inventor

Key dates

Filing dateNov 21, 2007
Grant dateAug 31, 2010
Priority date
Expiry dateMar 26, 2029

Classification

  • Technology area (CPC B)Performing Operations; Transporting
  • CPC primaryB81C2203/0742
  • WIPO fieldMicro-structural and nano-technology
  • WIPO sectorChemistry

Abstract

A method for fabricating micromachined structures is provided. At least one cavity is formed on a substrate and then a dielectric material different from the material of the substrate is filled in the at least one cavity. Next, a circuitry layer including a first etch-resistant layer and a dielectric layer is formed above the at least one cavity filled with the dielectric material. A portion of the circuitry layer exposed by the first etch-resistant layer is then etched. Finally, the dielectric material in the at least one cavity is etched out.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.