Patent · US Active

Method of etching structures into an etching body using a plasma

US7785486B2 · kind B2 · utility

5Cited by

27References

20Claims

0Family size

Assignee

Robert Bosch GmbH · DE

Inventors

Andrea Urban · Stuttgart, DE
Franz Laermer · Stuttgart, DE
Klaus Breitschwerdt · Lauterbach, DE
Volker Becker · Marxzell, DE

Key dates

Filing date	Sep 30, 2003
Grant date	Aug 31, 2010
Priority date	—
Expiry date	Jul 28, 2027

Classification

Technology area (CPC H)Electricity
CPC primaryH01J2237/3347
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

Additional variants of the method of etching structures into an etching body, in particular recesses in a silicon body that are laterally defined in a precise manner by an etching mask, using a plasma, is described. In addition, the use of this method in the introduction of structures, in particular trenches having a high aspect ratio, into a dielectric layer or a dielectric base body and in a layer of silicon is described, isotropic underetching and/or isotropic, sacrificial-layer etching, in particular using fluorine radicals or a highly oxidizing fluorine compound such as ClF3, being performed after the production of the structures in at least some areas in the case of the layer made of silicon.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.