Phase change memory device and manufacturing method
US7786460B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 9, 2007 |
| Grant date | Aug 31, 2010 |
| Priority date | — |
| Expiry date | Aug 23, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/79
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A phase change memory device comprises a photolithographically formed phase change memory cell having first and second electrodes and a phase change element positioned between and electrically coupling the opposed contact elements of the electrodes to one another. The phase change element has a width, a length and a thickness. The length, the thickness and the width are less than a minimum photolithographic feature size of the process used to form the phase change memory cell. The size of the photoresist masks used in forming the memory cell may be reduced so that the length and the width of the phase change element are each less than the minimum photolithographic feature size.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.