Patent · US Active

Gallium nitride crystals and wafers and method of making

US7786503B2 · kind B2 · utility

9Cited by

16References

35Claims

0Family size

Assignee

Momentive Performance Materials GmbH · US

Inventors

Mark P. D'Evelyn · Fremont, US
Dong-Sil Park · Schenectady, US
Steven Francis LeBoeuf · Raleigh, US
Larry Rowland · Scotia, US
Kristi Jean Narang · Voorheesville, US
Huicong Hong · Niskayuna, US
Stephen Daley Arthur · Glenville, US
Peter Micah Sandvik · Guilderland, US

Key dates

Filing date	Nov 13, 2006
Grant date	Aug 31, 2010
Priority date	—
Expiry date	Dec 17, 2028

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC30B9/00
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

A crystal comprising gallium nitride is disclosed. The crystal has at least one grain having at least one dimension greater than 2.75 mm, a dislocation density less than about 104 cm−2, and is substantially free of tilt boundaries.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.