Capacitor of dynamic random access memory and method of manufacturing the capacitor
US7786523B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 16, 2009 |
| Grant date | Aug 31, 2010 |
| Priority date | — |
| Expiry date | Nov 16, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/68
Abstract
A transistor formed on a semiconductor substrate has a gate electrode formed via a gate insulating film and first and second diffusion layers formed in the semiconductor substrate, the first and second diffusion layers being positioned at both sides of the gate electrode. A first electrode is connected to the first diffusion layer of the transistor. A capacitor insulating film formed on the first electrode is formed of a silicon oxide film containing a substrate which is faster than Cu in diffusion velocity and which more readily reacts with oxygen than Cu does. A second electrode formed on the capacitor insulating film is formed of one of a Cu layer and another Cu layer containing the substance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.