CDS capable sensor with photon sensing layer on active pixel circuit
US7786543B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 17, 2007 |
| Grant date | Aug 31, 2010 |
| Priority date | — |
| Expiry date | Dec 4, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/809
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A MOS or CMOS based active pixel sensor with special sampling features to substantially eliminate clock noise. The sensor includes an array of pixels fabricated in or on a substrate, each pixel defining a charge collection node on which charges generated inside a photodiode region are collected, a charge integration node, at which charges generated in said pixel are integrated to produce pixel signals, a charge sensing node from which reset signals and the pixel signals are sensed. In preferred embodiments the sensor includes a continuous electromagnetic radiation detection structure located above the pixel circuits providing a photodiode region for each pixel. The sensor includes integrated circuit elements adapted to maintain voltage potentials of the charge integration nodes substantially constant during charge integration cycles. The sensor also includes integrated circuit elements having electrical capacitance adapted to store charges providing an electrical potential at the charge integration node. In preferred embodiments this is a pinned diode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.