Programming a multilevel phase change memory cell
US7787291B2 · kind B2 · utility
17Cited by
6References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 26, 2007 |
| Grant date | Aug 31, 2010 |
| Priority date | — |
| Expiry date | Sep 28, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2013/0092
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Multilevel phase change memory cells may be programmed forming amorphous regions of amorphous phase change material in a storage region of the phase change memory cell. Crystalline paths of crystalline phase change material are formed through the amorphous regions of amorphous phase change material. Lengths of the crystalline paths are controlled so that at least a first crystalline path has a first length in a first programming state and a second crystalline path has a second length, different from the first length, in a second programming state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.