Flash memory device using double patterning technology and method of manufacturing the same
US7787301B2 · kind B2 · utility
3Cited by
1References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 31, 2006 |
| Grant date | Aug 31, 2010 |
| Priority date | — |
| Expiry date | Dec 2, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/40
Abstract
Provided are a flash memory device and a method of manufacturing the same. The flash memory device includes strings. Each of the strings has a string selection line, a ground selection line, and an odd number of word lines formed between the string selection line and the ground selection line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.