Metal chloride seeded growth of electronic and optical materials
US7790230B2 · kind B2 · utility
1Cited by
2References
16Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 30, 2008 |
| Grant date | Sep 7, 2010 |
| Priority date | — |
| Expiry date | Apr 18, 2028 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/12
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of deposition by: depositing a metal halide on a substrate; providing a vapor that forms a material by way of chemical vapor deposition; heating the metal halide to a temperature at or above the melting point of the metal halide and at or below the melting point of the material; and contacting the metal halide with the vapor to cause growth on the substrate of a solid solution of the metal halide in the material. The metal is a rare earth metal or a transition metal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.