Patent · US Active

Photomask blank

US7790339B2 · kind B2 · utility

6Cited by
9References
7Claims
0Family size

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Key dates

Filing dateApr 19, 2007
Grant dateSep 7, 2010
Priority date
Expiry dateSep 22, 2028

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T428/31616
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A photomask blank has a light-shielding film composed of a single layer of a material containing a transition metal, silicon and nitrogen or a plurality of layers that include at least one layer made of a material containing a transition metal, silicon and nitrogen, and has one or more chrome-based material film. The high transition metal content ensures electrical conductivity, preventing charge-up in the photomask production process, and also provides sufficient chemical stability to cleaning in photomask production. The light-shielding film has a good resistance to dry etching of the chrome-based material film in the presence of chlorine and oxygen, thus ensuring a high processing accuracy.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.