Optoelectronic device with germanium photodetector
US7790495B2 · kind B2 · utility
74Cited by
11References
10Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 26, 2007 |
| Grant date | Sep 7, 2010 |
| Priority date | — |
| Expiry date | Aug 26, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An optoelectronic device comprises a photodetector feature, an interfacial layer disposed above at least a portion of the photodetector feature, and a vertical contact disposed on at least a portion of the interfacial layer. The photodetector feature comprises germanium and is operative to convert a light signal into an electrical signal. The interfacial layer comprises nickel. Finally, the vertical contact is operative to transmit the electrical signal from the photodetector feature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.