Solomon Assefa
85Patents
15h-index
69Co-inventors
83Inventor score
Filing activity: Jun 18, 2003 → Nov 11, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7790495B2 | Optoelectronic device with germanium photodetector | Emerging Cross-Sectional Technologies | 74 | Active |
| US8008095B2 | Methods for fabricating contacts to pillar structures in integrated circuits | Electricity | 56 | Active |
| US8633067B2 | Fabricating photonics devices fully integrated into a CMOS manufacturing process | Electricity | 44 | Active |
| US8178382B2 | Suspended germanium photodetector for silicon waveguide | Emerging Cross-Sectional Technologies | 35 | Active |
| US7738753B2 | CMOS compatible integrated dielectric optical waveguide coupler and fabrication | Physics | 30 | Active |
| US8304272B2 | Germanium photodetector | Emerging Cross-Sectional Technologies | 27 | Active |
| US7902620B2 | Suspended germanium photodetector for silicon waveguide | Emerging Cross-Sectional Technologies | 22 | Active |
| US8614116B2 | Germanium photodetector | Emerging Cross-Sectional Technologies | 20 | Active |
| US7825000B2 | Method for integration of magnetic random access memories with improved lithographic alignment to magnetic tunnel junctions | Emerging Cross-Sectional Technologies | 16 | Active |
| US9086387B2 | Single-fiber noncritical-alignment wafer-scale optical testing | Electricity | 16 | Active |
| US7531367B2 | Utilizing sidewall spacer features to form magnetic tunnel junctions in an integrated circuit | Electricity | 16 | Active |
| US7999344B2 | Optoelectronic device with germanium photodetector | Emerging Cross-Sectional Technologies | 15 | Active |
| US7897428B2 | Three-dimensional integrated circuits and techniques for fabrication thereof | Electricity | 15 | Active |
| US8455292B2 | Deposition of germanium film | Emerging Cross-Sectional Technologies | 15 | Active |
| US8426921B2 | Three-dimensional integrated circuits and techniques for fabrication thereof | Electricity | 15 | Active |
| US8129811B2 | Techniques for three-dimensional circuit integration | Electricity | 13 | Active |
| US8765536B2 | Stress engineered multi-layers for integration of CMOS and Si nanophotonics | Electricity | 10 | Active |
| US7955887B2 | Techniques for three-dimensional circuit integration | Electricity | 10 | Active |
| US8847338B2 | Method for forming a self-aligned hard mask for contact to a tunnel junction | Electricity | 10 | Active |
| US8772902B2 | Fabrication of a localized thick box with planar oxide/SOI interface on bulk silicon substrate for silicon photonics integration | Electricity | 9 | Active |
| US9368653B1 | Silicon photonics integration method and structure | Emerging Cross-Sectional Technologies | 9 | Active |
| US8846440B2 | Germanium photodetector | Emerging Cross-Sectional Technologies | 7 | Active |
| US7072547B2 | Waveguide coupling into photonic crystal waveguides | Physics | 7 | Expired |
| US10090422B2 | Integrated photodetector waveguide structure with alignment tolerance | Emerging Cross-Sectional Technologies | 7 | Active |
| US7492631B1 | Methods involving resetting spin-torque magnetic random access memory | Physics | 7 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.