Patent · US Active

Production of semiconductor substrates with buried layers by joining (bonding) semiconductor wafers

US7790569B2 · kind B2 · utility

2Cited by

8References

27Claims

0Family size

Assignee

X-FAB SEMICONDUCTOR FOUNDRIES GMBH · DE

Inventors

Roy Knechtel · Geraberg, DE
Andrej Lenz · Tittmoning, DE

Key dates

Filing date	Nov 29, 2004
Grant date	Sep 7, 2010
Priority date	—
Expiry date	Dec 3, 2026

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/76259
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The invention relates to a method for producing semiconductor substrates by bonding. The aim of said method is to reduce the non-usable edge region on the bonded wafer component and to improve the edge geometry of the wafer composite. This is achieved by a method for joining two semiconductor wafers using a semiconductor wafer bonding process. The surfaces of the two semiconductor wafers that are to be bonded are provided with a border or edge geometry that has a special short front-end facet. After the bonding process, one of the two wafers is ablated to obtain an edge region that is as devoid as possible of defects and a usable wafer surface that is as large as possible.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.