Selective deposition of a dielectric on a self-assembled monolayer-adsorbed metal
US7790631B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 21, 2006 |
| Grant date | Sep 7, 2010 |
| Priority date | — |
| Expiry date | Nov 24, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods and apparatuses to selectively deposit a dielectric on a self-assembled monolayer (“SAM”) adsorbed metal are described. A wafer includes a device having a first electrode. A first self-assembled monolayer is deposited on the wafer covering the first electrode. Next, a portion of the first self-assembled monolayer is removed to expose the first electrode. The first self-assembled monolayer includes a hydrophobic layer. Further, second self-assembled monolayer is deposited on the first electrode. The second self-assembled monolayer includes a hydrophilic layer. Next, an insulating layer is deposited on the second self-assembled monolayer. Further, self-aligned contacts to one or more second electrodes of the device are formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.