Patent · US Active

Radiation-emitting semiconductor chip

US7791081B2 · kind B2 · utility

2Cited by

3References

32Claims

0Family size

Assignee

OSRAM Opto Semiconductors GmbH · DE

Inventors

Matthias Peter · Orpund, CH
Uwe Strausse · Bad Abbach, DE
Matthias Sabathil · Regensburg, DE

Key dates

Filing date	Jul 28, 2006
Grant date	Sep 7, 2010
Priority date	—
Expiry date	Mar 24, 2029

Classification

Technology area (CPC H)Electricity
CPC primaryH10H20/825
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A radiation-emitting semiconductor chip is specified, comprising a semiconductor body (3) having an n-conducting region (4) and a p-conducting region (5), the semiconductor body having a hole barrier layer containing a material from the material system InyGa1-x-yAlxN.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.