Group III nitride semiconductor substrate
US7791103B2 · kind B2 · utility
6Cited by
1References
18Claims
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Key dates
| Filing date | Jun 4, 2007 |
| Grant date | Sep 7, 2010 |
| Priority date | — |
| Expiry date | Mar 11, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0137
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A Group III nitride semiconductor substrate is formed of a Group III nitride single crystal, and has a diameter of not less than 25.4 mm and a thickness of not less than 150 μm. The substrate satisfies that a ratio of Δα/α is not more than 0.1, where α is a thermal expansion coefficient calculated from a temperature change in outside dimension of the substrate, and Δα is a difference (α−αL) between the thermal expansion coefficient α and a thermal expansion coefficient αL calculated from a temperature change in lattice constant of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.