Gallium nitride material structures including substrates and methods associated with the same
US7791106B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 1, 2008 |
| Grant date | Sep 7, 2010 |
| Priority date | — |
| Expiry date | Feb 21, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Gallium nitride material-based semiconductor structures are provided. In some embodiments, the structures include a composite substrate over which a gallium nitride material region is formed. The gallium nitride material structures may include additional features, such as strain-absorbing layers and/or transition layers, which also promote favorable stress conditions. The reduction in stresses may reduce defect formation and cracking in the gallium nitride material region, as well as reducing warpage of the overall structure. The gallium nitride material-based semiconductor structures may be used in a variety of applications such as transistors (e.g. FETs) Schottky diodes, light emitting diodes, laser diodes, SAW devices, and sensors, amongst others devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.