Semiconductor devices having dielectric layers and methods of forming the same
US7791125B2 · kind B2 · utility
3Cited by
1References
7Claims
0Family size
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Key dates
| Filing date | Jul 27, 2007 |
| Grant date | Sep 7, 2010 |
| Priority date | — |
| Expiry date | Feb 9, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a semiconductor device includes loading a semiconductor substrate into a reaction chamber, and providing metal organic precursors including hafnium and zirconium into the reaction chamber to form hafnium-zirconium oxide (HfxZr1-xO; 0<X<1) with a tetragonal crystalline structure on the semiconductor substrate. Related structures are also discussed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.