Patent · US Active

Etching solution for multiple layer of copper and molybdenum and etching method using the same

US7791573B2 · kind B2 · utility

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2References
15Claims
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Key dates

Filing dateJul 22, 2008
Grant dateSep 7, 2010
Priority date
Expiry dateJul 22, 2028

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/32134
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

An etching solution for a multiple layer of copper and molybdenum includes: about 5% to about 30% by weight of a hydrogen peroxide; about 0.5% to about 5% by weight of an organic acid; about 0.2% to about 5% by weight of a phosphate; about 0.2% to about 5% by weight of a first additive having nitrogen; about 0.2% to about 5% by weight of a second additive having nitrogen; about 0.01% to about 1.0% by weight of a fluoric compound; and de-ionized water making a total amount of the etching solution 100% by weight.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.