Non-volatile memory device and methods of using
US7791947B2 · kind B2 · utility
5Cited by
8References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 10, 2008 |
| Grant date | Sep 7, 2010 |
| Priority date | — |
| Expiry date | May 24, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B69/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present disclosure adjusts the voltage threshold values of select gates of NAND strings. The select gates of the NAND string can be read, erased, and programmed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.