Gas ring and method of processing substrates
US7794667B2 · kind B2 · utility
6Cited by
34References
36Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 19, 2005 |
| Grant date | Sep 14, 2010 |
| Priority date | — |
| Expiry date | May 26, 2029 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45591
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process gas to a reactor volume of a semiconductor processing reactor is provided through gas injector ports of a gas ring. The process gas flows horizontally from the gas injector ports across a principal surface of a rotating susceptor to exhaust ports of the gas ring. The spent process gas is removed from the reactor volume through the exhaust ports.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.